Thermoelectrical random stick network method and its application to carbon nanotube films

Abstract Electrical and thermal circuit analyses on a random stick network were combined to develop the simulation method calculate thermoelectric response of carbon nanotube (CNT) films. The experimental results successfully reproduced with respect gate-voltage dependence both electrical conductivity Seebeck coefficient CNT-film field effect transistors for various mixing ratios semiconducting/metallic CNTs. increases monotonically semiconducting CNT content rate increase in is strongly dependent chemical potential (i.e. carrier density). aligned films was also investigated. an film determined be isotropic independent measurement directions parallel perpendicular alignment), although direction alignment much larger than that direction.